| PART |
Description |
Maker |
| MC-45V16AD641 MC-45V16AD641EF-A10 MC-45V16AD641EF- |
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,60064位VirtualChannel同步动态RAM模块无缓冲型
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,6004VirtualChannel同步动态RAM模块无缓冲型
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,6004位VirtualChannel同步动态RAM模块无缓冲型
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| GLT5160L16 GLT5160L16-7TC GLT5160L16-10FJ GLT5160L |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
|
ETC[ETC]
N.A.
|
| THMY7216F0EG-75 |
16M Word x 72 Bit Synchronous DRAM Module(16M字x 72位同步DRAM模块)
|
Toshiba Corporation
|
| MC-4516CA726EF-A10 MC-4516CA726EF-A80 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC
|
| MC-4516CB647EF-A75 MC-4516CB647PF-A75 MC-4516CB647 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| MC-4516CD646 |
16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
|
NEC Corp.
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| M5M4V16169DRT-15 M5M4V16169DTP |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM 16MCDRAM6米（100万字6位）6K的缓存内存（1024字由16位）的SRAM
|
Mitsubishi Electric, Corp.
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF |
16M-bit(16M-word x 1-bit) Fast SRAM
|
NEC
|
| GX60N60C2D1 |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
|
IXYS CORP
|
